Extended Steady-State Analysis of the gamma-Irradiated Cartesian P-N Junction

摘要

A steady-state analysis of a gamma-irradiated Cartesian P-N junction is presented that takes into account (1) carrier lifetime variation with radiation density; (2) electric fields in quasi-neutral regions; (3) the effects of voltage drops in the junction as well as in a load resistor; and (4) the influence of electrodes, which are characterized by effective surface recombination velocities. For silicon devices, the model predicts superlinear radiation response for back-biased diodes, radiation response decreasing with increasing forward bias, and possible radiation current-sign reversal for high forward bias. Measurements on actual devices are discussed. (ERA citation 12:023384)