Novel Dynamical Investigations of Excitons and Their Structure in Semiconductors: Final Report for Period June 1984-November 1986

摘要

In this document, two spectroscopic investigations in the time dependent behavior of excitons in selected semiconductors are discussed. First, as a continuation of previous grant work, issues of energy dependent exciton-exciton scattering in a model bulk semiconductor Cu sub 2 O have been studied. Picosecond photomodulation methods have yielded for the first time direct kinetic information about scattering involving the 1S and 2P exciton states. Second, exciton formation and localization kinetics have been investigated through time-resolved photoluminescence in a new wide bandgap semiconductor quantum well structure, based on the ZnSe/(Zn,Mn)Se heterojunction. In this case exciton formation and recombination rates have been shown to also depend on an additional energy relaxation channel into the Mn-ion d-electron excitations. (ERA citation 13:001256)