Radiation-Hardened Microelectronics for Accelerators

摘要

Ionization and displacement phenomena in semiconducting materials are reviewed. The different classes of radiation discussed include fast neutron, x-rays and gamma rays and heavy charged particles. Both transient and steady state phenomena will be discussed. How these basic effects lead to change in the electrical characteristics of transistors and diodes and the functionality of intergrated circuits are summarized. The fundamental radiation limits for various semiconductor technologies are summarized. Recommendations and precautions are given regarding the applicability of various microelectronic technologies to different accelerator environments. 14 refs., 7 tabs. (ERA citation 13:054320)