Alpha, Silicon, and Iron Ion Induced Current Transients in Low Capacitance Silicon and GaAs Diodes.

摘要

High-speed (<40 ps) current transient and charge collection measurements were make using a wide-band 70-GHz, 6-ps risetime sampling oscilloscope, on GaAs and silicon diodes irradiated by 18 MeV Si, 12 MeV B, 12 and 100 MeV Fe ions, and 3 and 5 MeV alpha particles. Results show that the response of a device to a particle strike can be very fast but strongly depends on the LET (Linear Energy Transfer) of the particle. The rise time dependence with different parameters such as the doping density, bias, at different energies with different particles, is also persented. The data are then compared to the predictions of existing models. 7 refs., 12 figs., 2 tabs. (ERA citation 13:047273)