Dynamical behavior of the implant profile during ion implantations at elevated temperatures

摘要

The evolution of the implant distribution in time and space during elevated temperature ion implantation has been theoretically investigated using a comprehensive kinetic model. The implanted atoms were allowed to interact with the surface and with radiation-induced point defects. The synergistic effects of Gibbsian segregation, preferential sputtering, displacement mixing, radiation-enhanced diffusion, and radiation-induced segregation, as well as the influence of spatially nonuniform defect production were taken into account. The effects of the dynamical changes in the ion and damage distributions during implantation were also incorporated, by updating these distributions at high doses, using information obtained from TRIM calculations. Model calculations were performed for Al(sup +) and Si(sup +) implantation into Ni. 4 refs., 2 figs.