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Conduction- and valence-band dispersion curves: III-V semiconductor quantum wells.

机译：传导和价带色散曲线：III-V半导体量子阱。

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Short communication.

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作者
E. D. Jones S. K. Lyo J. F. Klem;
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年度 1991
页码 1-7
总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术 ;
关键词
Band Theory; EDB/656002; Energy Gap; Gallium Arsenides; Hole Mobility; Holes; Quantum wells; Semiconductor Materials; Strains; Valence bands;

机译：能带理论; EDB / 656002;能隙;砷化镓;空穴迁移率;空穴;量子阱;半导体材料;应变;价带;

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专利

1. Valence-band anticrossing in mismatched III-V semiconductor alloys [J] . K. Albert, J. Wu, W. Walukiewicz, Physical review . 2007 ,第4期

机译：不匹配的III-V半导体合金的价带反交叉
2. Fingerprints of CuPt ordering in III-V semiconductor alloys: Valence-band splittings, band-gap reduction, and x-ray structure factors [J] . Wei SH., Zunger A. Physical Review, B. Condensed Matter . 1998 ,第15期

机译：III-V半导体合金中CuPt有序的指纹：价带分裂，带隙减小和X射线结构因子
3. Conduction- and Valence-Band Energies in Bulk InAs_(1-x)Sb_x and Type II InAs_(1-x)Sb_x/InAs Strained-Layer Superlattices [J] . YOUXI LIN, DING WANG, DMITRY DONETSKY, Journal of Electronic Materials . 2013 ,第5期

机译：InAs_（1-x）Sb_x和II型InAs_（1-x）Sb_x / InAs应变层超晶格中的导带和价带能
4. Modeling gate and substrate currents due to conduction- and valence-band electron and hole tunneling CMOS technology [C] . Wen-Chin Lee, Chenming Hu . 2000

机译：建模由于导带和价电子以及空穴隧穿引起的栅极和衬底电流CMOS技术
5. Spectroscopy of III-V narrow gap semiconductor quantum wells. [D] . Larrabee, Diane C. 2006

机译：III-V窄间隙半导体量子阱的光谱学。
6. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors [O] . Osmar FP dos Santos, Sara CP Rodrigues, Guilherme M Sipahi, 2011

机译：基于III-V族半导体的p型掺杂超晶格的垂直传输研究
7. Tunneling through a narrow-gap semiconductor with different conduction- and valence-band effective masses [O] . Hatta, E., Nagao, J., Mukasa, K. 1996

机译：隧穿具有不同导带和价带有效质量的窄间隙半导体
8. Conduction- and valence-band dispersion curves: III-V semiconductor quantum wells [R] . Jones, E. D., Lyo, S. K., Klem, J. F. 1991

机译：传导和价带色散曲线：III-V半导体量子阱

Conduction- and valence-band dispersion curves: III-V semiconductor quantum wells.

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