Ion beam-assisted deposition of boron nitride from a condensed layer of diborane and ammonia at 78 K.

摘要

This paper examines the ion beam-assisted deposition (IBAD) of thin boron nitride films using cryogenically condensed precursors. Low energy (1100 eV) argon and (2000 eV) deuterated ammonia beams with currents of 600--850 nA were used to mix and initiate reactions in frozen (90 K) layers of diborane (B(sub 2)H(sub 6) and ammonia (NH(sub 3)) or only B(sub 2)H(sub 6), respectively. The resulting film is shown to be an amorphous BN coating approximately 30 (Angstrom) thick.