Two novel mechanisms of f-f-luminescence resonance excitation in semiconductors

摘要

Two novel mechanisms of f-f-luminescence excitation in semiconductors doped by rare-earth elements have been proposed. The first mechanism is concerned with doping a heterostructure with quantum wells. The second one is occurs when a quantizing magnetic field is applied to a doped semiconductor. It is shown that in both cases the Coulomb excitation process of the f-electron on the impurity atom by an electron-hole pair from semiconductor is of resonance nature. In this case the f-f-radiation excitation is shown to be several orders of magnitude greater in efficiency