Extremely High Frequency Directly Modulated Lasers

摘要

Several novel directly modulated semiconductor laser structures have beeninvestigated to increase the bandwidth of direct modulation. Detailed theoretical models were developed and a high speed directly modulated laser was fabricated and tested. Corner reflector lasers that were compatible with monolithic integration were demonstrated to have the largest directly modulated bandwidth of any single sided output laser to date. The semiconductor laser tested produced a 20 GHz bandwidth. Theoretical and experimental results indicate that device heating was a major factor in limiting bandwidth of semiconductor lasers. Experiments utilizing flip chip bonding semiconductor laser to diamond were conducted. These devices showed considerable improvements in both their DC and spectral behavior.