Approach for Studying the Creep/Sliding Behavior of Planar Metal- Silicon Interface

摘要

An experimental approach has been developed to investigate the deformation kinetics of planar interfaces, using a double-shear specimen geometry where the interfaces are loaded in shear. In addition to shear stresses, the apparatus is capable of applying normal stresses (tension or compression) on the interface. In the experimental arrangement, the relative displacements of the constituents at the top and bottom of the specimen are measured independently with high precision using a resistance gauge and a capacitance sensor, respectively. The experimental set-up is suitable for both constant displacement-rate and constant-load creep tests, and can be operated up to a temperature of 300 deg C. In the current study, preliminary creep tests were conducted on planar aluminum-silicon interfaces prepared by diffusion bonding in argon atmosphere at 565 deg C. During the tests, the interfaces were subjected to nominally constant shear stresses ranging from 0.8-2 MPa, with the test temperatures ranging from 100-200 deg C. In all cases, the interface was found to slide via a time-dependent relaxation mechanism, indicating the suitability of the proposed test for studying interfacial sliding.