HTS Josephson Technology on Silicon With Application to High Speed Microelectronics

摘要

Superconducting electronics have long been regarded as having the potential for superior switching speeds and reduced power consumption compared to semiconducting devices. High temperature superconducting materials, such as YBa2Cu3O7, present many new opportunities. Because many targeted applications of superconducting electronics rely on the high switching speeds attainable by Josephson junctions, however, rf properties have played a significant role in the search for practical substrates. The overall goal of this Phase II STTR program, a collaboration between Advanced Fuel Research, Inc. and the State University of New York at Stony Brook, was to develop an ultrahigh-speed superconducting electronics technology using electron beam modified high temperature superconducting Josephson junctions on silicon and other rf compatible substrates. Considerable success was achieved towards the development of a compliant substrate technology that could potentially enable growth of low- stress YBa2Cu3O7 on silicon. Also, a model was developed describing the formation and degradation properties of electron beam modified junctions, thus serving as a reliable basis for the description of the junctions and allowing for better control of the process and better reproducibility of the devices. Unfortunately, however, the program was unsuccessful in demonstrating working junctions and junction-based devices due to equipment problems and loss of key technical personnel.