Solvothermal Molecular Precursor Routes to Semiconductor Film and Crystal Growth

摘要

This research project explored the utility of molecular precursor decomposition in superheated non-aqueous solvents directed towards semiconductor crystal growth. Reactions were run in toluene, THF, and under solvent free conditions. An in situ precursor synthesis and decomposition resulted in GaN nanoparticles from simple starting materials (GaCl(3) and NaN(3)). Particle sizes range from about 10 to hundreds of nanometers. Upon annealing to 1000 degrees C, the poorly crystalline products ordered into crystalline hexagonal GaN and luminescence. The conversion of synthesized organometallic dimeric gallium amino precursors to GaN was less successful; however they showed some utility in vapor phase film growth. Silver and silver sulfide nanoparticles were also produced in a solvothermal system via silver azide decomposition producing particles in the 100 mn to micron size regime.