Low-Voltage Ferroelectric Phase Shifters From L- to C-Band

摘要

This paper describes the design, fabrication and test results of a family of integrated low voltage ferroelectric phase shifters ranging in frequency of operation from 0.7 GHz to 6 GHz. All devices use a common material system of BaxSr1-xTiO3 (BST) thin-films on Al2O3 (sapphire), allowing integration with high-Q inductors and other passive microwave elements. Novel bias structures have also been developed to reduce the voltages required to tune the materials, making them more attractive for avionics systems applications.