首页> 美国政府科技报告 >PRODUCTION ENGINEERING MEASURE “PRODUCTION DEVELOPMENT OF A SILICON PLANAR EPITAXIAL TRANSISTOR WITH A MAXIMUM OPERATING FAILURE RATE OF 0.001% PER 1000 HOURS AT A CONFIDENCE LEVEL OF 90% AT 25℃”
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PRODUCTION ENGINEERING MEASURE “PRODUCTION DEVELOPMENT OF A SILICON PLANAR EPITAXIAL TRANSISTOR WITH A MAXIMUM OPERATING FAILURE RATE OF 0.001% PER 1000 HOURS AT A CONFIDENCE LEVEL OF 90% AT 25℃”

机译:生产工程测量“硅平面外延晶体管的生产开发,最大工作故障率为每1000小时0.001%,置信水平为25%时的90%”

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摘要

This report contains the results of the efforts expended in the Reliability Engineering area during the sixth (and final) quarter of this reliability improvement program. Final large scale tests of Al-Al-Au metallization process devices are described and the results compared with previous test results. Parameter distributions and stability during operating and storage life tests are discussed as well as comparative failure rates and mechanical ruggedness. An estimate of the failure rate achieved on this program for the Motorola 2N2219 is presented.

著录项

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  • 作者单位
  • 年度 1963
  • 页码 1-51
  • 总页数 51
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工业技术;
  • 关键词

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