The Design of Wideband Transistor Amplifiers by an Extension of the Sampled-Parameter Technique

摘要

The experiments conducted in nuclear physics laboratories often require the design of fastpulse amplifiers. Recent transistors offer new capabilities in this field. The work presented here centers on the design of such amplifiers by the sampled-parameter technique, in which the transistor is characterized by two-port parameters measured at a set of frequencies through the frequency band of interest. The feedback and coupling networks are selected by computations based on these sampled parameters. An application of this technique has led to an iterative stage using a 2N918 transistor. (Author)