Semiconductor Reliability — the Correlation of Excess Noise with Deleterious Surface Phenomenon

摘要

The properties of 1 /f (excess) noise present in semiconductor p-n junctions under normal operating conditions, including noise voltage, frequency dependence. noise frequency exponent a, and the noise voltage-reverse leakage current proportionality constant K', are described. Variations in these excess noise parameters, when the semiconductor surface is subjected to various external ambient, have been demonstrated and indicate that excess noise in semiconductor devices can be associated with the surface in general and, more specifically, with surface inversion layer or channel formation. Techniques employed in excess noise measurements and for detecting semiconductor surface inversion are described. The applicability of gross excess noise voltage, noise frequency exponent a, and the noise proportionality constant (K') measurements for use as a reliability screening technique is discussed.