Microelectronic Integrated Circuit Accelerated Life Tests

摘要

The advent of the integrated circuit as a design vehicle in the more sophisticated systems had led to many assumptions concerning their physical cause of failure. The methods of stressing monolithic integrated circuits reliability degradation models as developed from stressing 2000 circuits is the subject of this report. Among the many stressing techniques used in this program was the long-term operating life testing at several temperatures and biases. Other techniques, such as long-term storage life testing, mechnical shock, centrifuge, thermal shock, and step stressing, supplemented the basic testing technique. Its most important contribution to reliability was in its evaluation of three types of basic operating life test models, its verification that previous discrete silicon transistor failure modes are still applicable, and that more extensive use of thin metallized interconnection strips has required more sophisticated process controls. The testing emphasis explored the physical cause of failure and the problem of accelerated stresses to some assumed use condition.