Preparation and Properties of In(x) Ga(1-x) As with Application to Electroluminescent Devices.

摘要

The liquidus and solidus lines for the In-Ga-As System have been established. The liquidus data were obtained by measuring the solubility of InAs in In-Ga melts and the solidus data from the composition of crystals grown from In-Ga-As melts by liquid epitaxy techniques. A phase diagram which is in excellent agreement with these experimental data have been derived. The calculations are based on a quasi-regular solution model for the three binary liquids as well as for the InAs-GaAs pseudobinary solid. The thermodynamic constants were obtained from the literature and the interaction parameters were selected semi-empirically to obtain a best fit. Undoped In(x) Ga(1-x) As layers were grown on (111) GaAs and (111) InAs substrates using an improved vertical liquid epitaxial system. Various layer characteristics were examined and growth criteria which yield satisfactory single crystals were determined. Due to the high lattice mismatch between InAs and GaAs and the serious plastic deformation of InAs above 700C,satisfactory layers were obtained only in the ranges x < 0.2and x > 0.7. Band gap energy as a function of mixed crystal composition was measured. (Author)