Growth of Doped and Undoped Single Crystal Laser Materials in the System (MF2)x.(YF3)(1-x).

摘要

Laser host materials were grown in the CaF2-YF3 and BaF2-YF3 binaries. Two compositions in the former binary were found to be capable of producing single crystals: 9CaF2.YF3 and CaF2.2.6YF3. The former possessed a fluorite structure and the latter was indexed on a hexagonal unit cell. Trivalent and divalent rare earth-doped single crystals of these compositions were successfully grown. The necessary phase equilibria is presented and discussed.