Hot Electron Microwave Conductivity of Wide Bandgap Semiconductors.

摘要

Hot electron microwave conductivity of the wide bandgap semiconductors GaN, SiC and Diamond has been calculated using displaced Maxwellian approximation for the electron distribution function. The effects of both the energy and momentum relaxation times due to scattering by acoustical, optical intervalley phonons and by ionized impurities are included in the derivations. Numerical results for the microwave conductivity and the change in dielectric constant as a function of frequency and bias electric field are presented. It is found that significant change in the conductivity and dielectric constant contribution for a fixed bias field occurs at very high frequencies on the order of 1000 GHz, which is well beyond the range of current microwave device interest.