The Influence of Autoionization Accompanied by Excitation on the Dielectronic Recombination and the Ionization Equilibrium of Silicon Ions.

摘要

The dielectronic recombination rate coefficients have been calculated for the various ionization stages of silicon. Account has been taken of all stabilizing radiative transitions nd all autoionization processes which involve a single-electron electric-dipole transition of the recombining ion core. For certain ions the dielectronic recombination rates, although still larger than the direct radiative recombination rates, are found to be substantially reduced when account is taken of the effects of a previously neglected autoionization process in which the excited recombining ion core undergoes a Delta n = o transition to a lower excited state. The Temperatures at which these ions have their maximum abundance in corona equilibrium are significantly reduced when use is made of the new dielectronic recombination rates. Calculations are also presented for the total rates of radiative energy loss from isothermal steady-state plasmas due to the line and continum emission of silicon ions. (Author)