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Dose Rate Effects on Radiation Damage of GaAs Using Electroreflectance.

机译：剂量率对电致背光Gaas辐射损伤的影响。

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Radiation damage profiles for room temperature implanted gallium arsenide (GaAs) were obtained using electroreflectance. The effect of dose rate on radiation damage was examined for oxygen, argon, zinc, cadmium, xenon, magnesium, neon and nitrogen implanted GaAs. This dose rate dependence was explained by various annealing effects. Radiation damage profiles for diatomic oxygen and nitrogen implanted GaAs were obtained and interpreted. (Author)

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作者
hanson,wayne a.;
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年度 1976
页码 1-77
总页数 77
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Radiation damage; Gallium arsenides; Ion implantation; Dose rate; Room temperature; Oxygen; Argon; Zinc; Cadmium; Xenon; Magnesium; Neon; Nitrogen; Annealing; Theses; Electroreflectance; Impurities; Semiconductors;

机译：辐射损伤;砷化镓;离子注入;剂量率;室温;氧;氩;锌;镉;氙;镁;氖;氮;退火;论文;电反射;杂质;半导体;

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Dose Rate Effects on Radiation Damage of GaAs Using Electroreflectance.

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