Transferred Electron Effects In n-GaAs And n-InP Under Hydrostatic Pressure,

摘要

To obtain useful results for fundamental band structure parameters using transferred electron effects, the investigator must begin with high purity, high mobility material, relatively free from ionized impurities. This can usually be achieved by epitaxial growth. The epitaxial samples should be grown on a semi-insulating substrate and shaped into 'H' or turret patterns to minimize effects due to the metallic contacts. Turret shaped samples are best since in one polarity a boundary condition producing either transit time oscillations or current saturation due to a high cathode field will yield values of the saturated drift velocity. In the opposite polarity, the absence of a domain mode and a sufficiently high value of the peak velocity, along with current saturation or switching, or circuit controlled oscillations, can then provide confidence that low boundary field conditions have been achieved.