Final State Correlation Effects in Auger Lineshapes; Application to Silicon Dioxide

摘要

Final state correlation effects in Auger lineshapes are considered within the cluster LCAO-MO-CI theory with a parameterized Hamiltonian. A model problem is solved analytically to elucidate the role of final state hole-hole correlation and to understand the localization of the holes on rather small subclusters of the system. The relationship of the correlation effects to the relative magnitudes of the one-center hole-hole repulsion u and the Bandwidth gamma has been previously reported; however, this previous work has been limited to metallic single element conductors. This work extends the theory to covalently bonded insulators (and possibly semiconductors) consisting of more than one element. (Author)