首页> 美国政府科技报告 >Interactions between Carriers and LO Phonons in Bulk p-GaSb and p-InSb: Raman Interference Lineshapes

【24h】

Interactions between Carriers and LO Phonons in Bulk p-GaSb and p-InSb: Raman Interference Lineshapes

机译：大块p-Gasb和p-Insb中载流子和LO声子之间的相互作用：拉曼干涉线形

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

No abstract available.

著录项

作者
Dornhaus, R.; Farrow, R. L.; Chang, R. K.;
展开▼
作者单位

展开▼
年度 1979
页码 p.1-5
总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium antimonides; Indium antimonides; Phonons; Raman spectroscopy; Solid state electronics; Reprints;

机译：锑化镓;锑化铟;声子;拉曼光谱;固态电子学;重印;
入库时间 2022-08-29 11:35:47

相似文献

外文文献
中文文献
专利

1. Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires [J] . N. Begum, A. S. Bhatti, F. Jabeen, Journal of Applied Physics . 2009,第11期

机译：III-V纳米线中LO和SO声子的拉曼散射的线形分析
2. Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density [J] . K. T. Tsen, Juliann G. Kiang, D. K. Ferry, Applied Physics Letters . 2006,第11期

机译：GaN中LO声子的亚皮秒时间分辨拉曼研究：取决于光激发载流子密度
3. EXCITON-LO-PHONON INTERACTION OF CUCL SPHERICAL QUANTUM DOTS STUDIED BY RESONANT HYPER-RAMAN SPECTROSCOPY [J] . Baranov AV., Matsumoto Y., Yamauchi S. Physical Review, B. Condensed Matter . 1997,第16期

机译：共振超拉曼光谱研究立方球形量子点的激子-声子相互作用
4. Interactions of carriers, phonons and point defects during direct femtosecond laser writing of waveguides in bulk dielectrics [C] . Sergey I. Kudryashov Laser-Induced Damage in Optical Materials 2004 . 2004

机译：飞秒激光直接写入体电介质中的波导时，载流子，声子和点缺陷的相互作用
5. I. Raman scattering and x -ray diffraction study of annealing effects on confined LO and folded LA phonons in gallium arsenide-aluminum arsenide superlattices. II. Picosecond light scattering studies of relaxation and tunneling in gallium arsenide/aluminum(x)gallium(1-x)arsenide multiple quantum well structures [D] . Levi, Dean Howard 1990

机译：一，拉曼散射和X射线衍射研究对砷化镓-砷化铝超晶格中局限的LO和折叠的LA声子的退火作用。二。皮秒光散射研究砷化镓/铝（x）镓（1-x）砷化物多量子阱结构中的弛豫和隧穿
6. Phonon-Electron Interactions in Piezoelectric Semiconductor Bulk Acoustic Wave Resonators [O] . Vikrant J. Gokhale, Mina Rais-Zadeh -1

机译：压电半导体体声波谐振器中的声子-电子相互作用
7. Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration [O] . Steele J.A., Lewis R.A., Henini M., 2014

机译：拉曼散射显示名义上无掺杂的GaAsBi中的强LO-声子-等离子体耦合：光学测定载流子浓度
8. Interaction between Localized Carriers in the Accumulation Layer and Extended Bulk LO Phonons in InSb and GaSb: Raman Interference Lineshapes [R] . Dornhaus, R., Farrow, R. L., Chang, R. K., 1979

机译：累积层中的局部载流子与Insb和Gasb中的扩展体积LO声子之间的相互作用：拉曼干涉线形

Interactions between Carriers and LO Phonons in Bulk p-GaSb and p-InSb: Raman Interference Lineshapes

摘要

著录项

相似文献

相关主题

期刊订阅