Preparation and Photoelectronic Properties of n-Type Cd2GeO4

摘要

Cd2Geo4 crystallizes with an orthorhombic structure space group Pbnm (a=5.20,b-11.14,c-6.57A) as determined by the onset of photocurrent, the flat band potential is -0.80(5)V vs SCE. An indirect band gap at 3.15(5) eV and a direct band gap at 4.15(5) eV were ascertained from measurement of the photoelectronic quantum efficiency. Despite some initial loss in the photo-response during the first hour of irradiation at 1.0 W/cm2, Cd2Geo4 has been shown to be far more stable as an electrode than Cd2SnO4. (Author)