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Improvement of Thermoelectric Properties for BiTe Related Materials by Carrier Scattering and Preparation of n-type ZnSb

机译：通过载波散射改善咬合相关材料的热电性能和N型ZnSB的制备

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Kazuhiro Hasezaki;
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年度 2011
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1. Preparation and properties of ZnSb thermoelectric material through mechanical-alloying and Spark Plasma Sintering [J] . Pothin R., Ayral R. M., Berche A., Chemical engineering journal . 2016,第Null期

机译：机械合金化和等离子烧结制备ZnSb热电材料及其性能
2. Synergistic tuning of carrier and phonon scattering for high performance of n-type Bi2Te2.5Se0.5 thermoelectric material [J] . Xiao Ye, Yang Junyou, Jiang Qinghui, Journal of Materials Chemistry, A. Materials for energy and sustainability . 2015,第44期

机译：n型Bi2Te2.5Se0.5热电材料的高性能载流子和声子散射的协同调节
3. Microstructure control and thermoelectric properties improvement to n-type bismuth telluride based materials by hot extrusion [J] . Junyou Yang, Rougang Chen, Xian Fan Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2007,第1a2期

机译：热挤压对n型碲化铋基材料的组织控制和热电性能的改善
4. Preparation and evaluation of the n-type PbTe based material properties for thermoelectric generators [C] . Tse-Hsiao Li, Jenn-Dong Hwang, Hsu-Shen Chu, Symposium B on Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration . 2013

机译：用于热电发电机N型PBTE材料性能的制备与评价
5. Thermoelectric property studies on nanostructured N-type silicon-germanium bulk materials [D] . Wang, Xiaowei 2009

机译：纳米结构N型硅锗散装材料的热电性研究
6. Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials [O] . Jun Mao, Jing Shuai, Shaowei Song, 2017

机译：操纵离子化杂质散射以在n型Mg3Sb2基材料中实现高热电性能
7. Improvement of Thermoelectric Properties of ZnSb and its Preparation by Sintering [O] . Noboru Makino, Yasuo Kimura, Masaki Suzuki 1965

机译：ZnSB热电性能提高及其烧结制备
8. Preparation and Thermoelectric Properties of p- and n-type IrSb(sub 3) [R] . Caillat, T., Borshchevsky, A., Fleurial, J-P. 1994

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Improvement of Thermoelectric Properties for BiTe Related Materials by Carrier Scattering and Preparation of n-type ZnSb

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