Progress Toward a Monolithically Integrated Coherent Diode Laser Array

摘要

Progress toward the design and fabrication of a GaAlAs semiconductor laser array capable of high average power levels (0.1 to 1.0 watt) and low (approx 1 millirad) beam divergence is reported. A large optical cavity (LOC) configuration is grown by liquid phase epitaxy. The LOC structure is characterized by photoluminescence scans, ion microprobe mass analysis (IMMA), and optical waveguiding measurements. Fabry-Perot, active-passive, and DBR lasers are fabricated using chemical and ion beam etching. Gratings formed using holographic and ion beam etching techniques provide third order feedback for the DBR lasers, and are also used as distributed beam deflectors (DBDs) and output couplers. Comparisons of the results of experiments performed on DBR lasers, DBDs, and coupled lasers are made with theoretical models. Details of the material growth, material characterization, device fabrication, experiments, and theoretical models are presented in this report. (Author)