An IR Sensitive, Real-Time Imaging Technique Based on a Photoelectrochemical Cell

摘要

A real-time imaging technique based on optical saturation phenomena in photoelectrochemical cells has been developed. The long wavelength spectral sensitivity of these devices extends to the bandgap energy of the semiconductor photoelectrode employed. An image resolution of 180 microns and a response time of better than 100 msec has been obtained with an n-GaAs cell. (Author)