Electrical Characterization of VLSI (Very Large Scale Integration) RAMs and PROMs (Programmable Read Only Memories)

摘要

Extensive electrical characterizations were performed on 256K bit and 512K bit ultra violet erasable PROMs (UVEPROMs), 64K bit electrically erasable PROMs (EEPROMs), 64K static RAMs (organized as 8Kx8 bits), 256K dynamic RAMs (CMOS) and 32R16 PAL devices available from the merchant semiconductor industry. Based on the data obtained from the devices, parameter limits were established and proposed for the draft MIL-M-38510/XXX specifications. The data, proposed limits and test methodologies and the related discussions are presented.