High-Pressure Study of Photoluminescence in Indium Phosphide at Low Temperature

摘要

Photoluminescence measurements on n-type Indium phosphide have been carried out under hydrostatic pressure in a diamond anvil cell at 20 K. The photoluminescence peak corresponding to the direct-band-gap transition has been observed up to 12 GPa and has been found to change sublinearly with pressure, similar to room-temperature measurements. The effect of shear strain on the photoluminescence signal is also discussed. The intensity of the luminescence signal was obtained as a function of pressure.