Measurements of Ultrafast Optical Nonlinearities in Semiconductors.

摘要

The response of a bulk semiconductor platelet under the influence of nonresonant pulse excitation below the band gap is measured using femtosecond laser techniques. These optical Stark effect measurements are analyzed using the effective Block equations for semiconductors. These equations are solved (i) dynamically in the large detuning, low intensity limit and (ii) for arbitrary intensities in the adiabatic limit. Reprints. (RRH)