Photoassisted Deposition of Silicon Dioxide from Silane and Nitrogen Dioxide

摘要

Three new reactions for depositing silicon dioxide at low temperatures using vacuum ultraviolet and ultraviolet radiation to initiate a reaction between silane and nitrogen dioxide have been developed. The optical and electrical properties of these films are reported. The effect of ion implantation on the infrared spectra of oxides grown by vacuum ultraviolet irradiation is also presented. Keywords: Photochemical deposition; Silicon dioxide; Silane; Nitrogen dioxide; ion implant; Effects; Silicon dioxide films. (mgm)