Radial Distribution Measurement of SiH in a Low-Pressure Silane Plasma

摘要

The radial emission intensity distribution of SiH (A2 delta, v=0) over the substrate of a low-pressure silane plasma was investigated for various substrate temperatures (Ts=20-320 C). Measured lateral intensities were converted to radial emission coefficients using an Abel inversion. The intensity near the center of the substrate was found to increase with Ts and yielded an activation energy Ea of 1.1 kcal/mole. This result is consistent with the value of Ea determined by laser-induced fluorescence measurements obtained previously. Radially resolved emission data obtained by varying the operating parameters of rf power, gas flow rate, silane/argon mixing rate, and total gas pressure provide a useful means of determining the conditions necessary to generate a uniform plasma. Keywords: Emission, Plasma, Silane, Silicon hydride, Reprints. (MJM)