Temperature Dependence of Photon-Gated Persistent Spectral Hole-Burning for the Meso-Tetra-P-Tolyl-Zn-Tetrabenzoporphyrin/Chloroform System in Poly(Methylmethacrylate).

摘要

Persistent spectral hole-burning has been utilized as both a tool for studying relaxation processes in amorphous solids and as a means for possibly achieving high-density frequency-domain optical storage. Persistent spectral holes are formed in inhomogeneously broadened absorption lines when a photoinduced change occurs in the subset of absorbers that are in resonance with a narrowband laser beam. If the photoreacted centers do not absorb at the original wavelength, a dip in absorption or spectral 'hole' is formed that may be detected by subsequent measurement of the absorption line. One- and two-color persistent spectral hole-burning properties of the electron donor-acceptor system meso-tetra-p-tolyl-Zn-tetrabenzoporphyrin/chloroform in poly(methylmethacrylate) are examined versus temperature from 1.5 to 90 K. The efficiency for photo-gated (two-color) hole-burning is independent of temperature, while the one-color hole-burning efficiency decreases as the temperature is raised from 1.5 K. Raising the temperature improves the gating ratio (ratio of two- to one-color hole-burning efficiencies) from 100 at 1.5 K to 10,000 at 90 K. The loin-power, short-burn-time hole width is also measured from 1.5 K to 90 K and is found to have a T(2.17 + or - 0.07) power law behavior. (AW)