Microchannel Heat Sinks for Two-Dimensional High-Power-Density Diode Laser Arrays.

摘要

A two-dimensional GaInAsP/InP diode laser array was operated with CW power dissipation up to 500 W/cc into a Si microchannel heat sink. The approximately 1 x 4 sq mm laser array was used to characterize the heat sink and a value of 0.040 C sq cm/W for the thermal resistance per unit area was deduced. The extrapolated value for a 1 sq cm heated area is 0.070 C sq cm/W. Reprints. (EDC)