Development of a Ge/GaAs HMT Technology Based on Plasma Enhanced Chemical VaporDeposition

摘要

The following report details the progress on ONR contract number N-00014-86-C-0838 during the period from January 1, 1991 to December 31, 1991. This program is targeted at development of a Ge on GaAs High Mobility Transistor (HMT) technology. During this period, the work has focused on 2 areas. The first area described involves the effect of the Si deposition parameters on the electrical characteristics of the composite Ge pseudomorphic Si-SiO2 MIS structure. Complementary n and p type Ge MIS structures are presented which exhibit low midgap Dit values. The second area described involves the fabrication of Ge MISFET devices using the pseudomorphic Si-SiO2 gate insulator. These n-channel transistors exhibit a transconductance of 24 mS/mm at a gate length of 2 microns.