Development of Model Based Magnetic LP-LEC Growth of Large Diameter GaAs

摘要

The objective of this research was to explore the range of analytical informationon the defect structure of doped and semi-insulating GaAs obtainable from computational, non-invasive, near infrared absorption analysis. Motivation for this research was provided by the realization that the establishment of meaningful property specifications for device materials is contingent on noninvasive defect analysis executable in a fabline environment. Infrared