Ultrafast, Passive, Broad-Band, Optical Shutter Based on Novel Semiconductor/Conducting Polymer Interfaces.

摘要

The project sought to implement a new technology for a novel solid state optical shutter obtained from interfacing inorganic semiconductors to conducting polymers, which then switch on activation by a high intensity radiation source in the ultrafast regime, Se/P(DPA) interfaces were prepared and yielded switching efficiencies at 532 nm, calculated as Delta OD= OD(laser)-OD(rest), of between 0.3 and 0.6 at pulse energies as low as 0.1-1.0 mJ/pulse (7 mm beam). Tests with CdSe, AlSb yielded similar Delta OD values. Tests with single crystal CdSe did not yield promising results. The conclusion appears to be that much additional work is needed, especially on a scientific level probing the physical aspects of the phenomenon, before practical devices can become feasible.