Conditions for the Additivity of Conductance for Parallel Mesoscopic Channels.(Reannouncement with New Availability Information)

摘要

We have completed our Monte Carlo approach to impact ionization of electrons inGaAs, InP and InAs and most recently in Ga(0.43)In(0.57)As. We find that in all these materials the ionization mechanism is quantitatively different to what has been described in previous simplified models, such as Shockley's lucky electron theory. The dependence on the electric field is markedly different in Ga(0.43)In(0.57)As. With regard to quantum transport, we have investigated the concepts of conductance and capacitance on a general basis and have developed criteria for the additivity of conductance in parallel mesoscopic channels.... Electronic transportation, Semiconductor heterostructures.