Magnetotransport Properties of p-Type (In,Mn)As Diluted Magnetic III-VSemiconductors

摘要

Magnetotransport properties of p-type (In,Mn)As, a new diluted magneticsemiconductor based on a III-V semiconductor, are studied. The interaction between the holes and the Mn 3d spins is manifested in the anomalous Hall effect, which dominates the Hall resistivity from low temperature (0.4 K) to nearly room temperature, and in the formation of partial ferromagnetic order below 7.5 K, which is a cooperative phenomenon related to carrier localization. The coexistence of remanent magnetization and unsaturated spins as well as the large negative magnetoresistance at low temperatures is explained by the formation of large bound magnetic polarons.... Diluted magnetic semiconductors, Ferromagnetism, Molecular beam epitaxy, Heterostructures, III-V Compound semiconductors.