Novel Double-Metal Structure for Voltage-Programmable Links. (Reannouncement withNew Availability Information)

摘要

A novel metal-insulator-metal (MIM) structure has been developed for an in field-programmable gate arrays (FPGA's) as a voltage-programmable link (VPI). The present structure relies on a combination of a refractory metal and aluminum as the lower electrode, and aluminum alone as the top electrode. The insulator, prepared by means of plasma-enhanced chemical vapor deposition, comprises a of nearly stoichiometric silicon dioxide interposed between two layers of silicon-rich silicon nitride. This metal-insulator-metal (MIM) has displayed characteristics desirable for am in the emerging FPGA technology.