首页> 美国政府科技报告 >Development of Ultra-Low Noise, High Sensitivity Planar Metal Grating Coupled III-V Multiquantum Well Infrared Detectors for Focal Plane Array Staring IR Sensor Systems
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Development of Ultra-Low Noise, High Sensitivity Planar Metal Grating Coupled III-V Multiquantum Well Infrared Detectors for Focal Plane Array Staring IR Sensor Systems

机译:开发用于焦平面阵列红外传感器系统的超低噪声,高灵敏度平面金属光栅耦合III-V多量子阱红外探测器

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摘要

To develop ultra-low dark current and high detectivity planar metal gratingcoupled bound-to-miniband (BTM) III-V quantum well infrared photodetectors (QWIPs) for 8 to 12 um focal plane arrays (FPAs) staring IR sensor systems. To develop novel type-I and type II III-V QWIPs with multicolor, broad and narrow band spectral response in the 8 to 14um wavelength range. The material systems to be studied include GaAS/AlGaAs, AlAs/AlGaAs, InGaP/GaAs (by MOCVD) grown on GaAs substrates and InAlAs/InGaAs (MBE) grown on InP substrate. To conduct theoretical and experimental studies of the planar metal grating coupled structures for normal incidence illumination on QWIPs. Different metal grating coupled structures using 1-D (line) and 2-D (square mesh and dot) metal gratings will be studied in order to achieve high coupling quantum efficiency under normal frontside and backside illuminations on QWIPs. To perform theoretical and experimental studies of dark current, photocurrent, optical absorption, spectral responsivity, noise, and detectivity in different types of QWIPs developed under this program.

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