Laser Diagnostics of RF Hydrogen Plasma Reactors: Application to the Processingof III-V Materials

摘要

Two photon laser induced fluorescence (TALIF) has been developed as a convenientand reliable diagnostic of H atoms in plasma processing environments. It has high spatial and temporal resolution, good sensitivity, and the capability of absolute concentration measurements. Detailed diagnostics have been carried out in plasma reactors with and without semiconducting wafers. These measurements have led to a model that incorporates H atom production, diffusion, and surface recombination. This model has accurately predicted both the spatial and temporal behavior of the H-atom concentration in a plasma processing environment. Atomic H, Glow discharge, Plasma processing, Laser diagnostics III-V semiconductors.