Ion Implantation of 3He in Tantalum for Use in a Low Energy Deuteron PolarizationAnalyzer

摘要

The implantation of tantalum foils with He(3) has been accomplished for implantenergies from 7 to 20 keV and doses from 1.5-29.3 Coulombs/sq cm. Implant thicknesses are not consistent with the Zero order implantation theory, but are in agreement with previous experiment. Thickness dependence upon implant energy, dose, and temperature are studied. The foils were bombarded with deuterons to determine target thicknesses, thickness lifetimes, and to study the properties of the tensor analyzing power of the (3)He(d,p)He(4) reaction near its 430 keV resonance. Ayy is measured and appears energy independent and isotropic in the energy range 222-322 keV. (Author).