Chemistry Involving the Separation, Isolation, and Immobilization of Ill-VCompound Semiconductor Nanocrystals and Quantum Dots

摘要

The facile thermolysis of Cl2GaP(SiMe3)22 to eliminate Me3 SiX and yieldnanocrystalline GaP has been studied via thermal gravimetric analysis (TGA) and it has been found that the Me3SiCl is eliminated in a step-wise manner. Also, the new ternary single-source precursor Ga2(As,P)C13n has been synthesized and thermolyzed to yield the ternary III-V GaAsxPy. In addition, nanocrystalline GaAs and GaP, prepared by the Kher/Wells low temperature solution phase method, have been studied by transmission electron microscopy (TEM) and, in the TEM's of both, the lattice fringes of nanocrystalline material are clearly evident. Using a host of analytical techniques, it has been shown that the GaAs has crystalline regions