Development of Process Technology for the Fabrication of Mesoscopic Devices

摘要

The development of the processes necessary for fabrication of sub-100nmheteroepitaxial Si(x)G3e(1 -x) structures in Si (100) substrates is described. The structures are required to be planar and definable by available patterning techniques (e.g. X-ray, e-beam, ion beam, or optical lithography). The report describes the investigation of two candidate patterning processes, enhanced ion beam etching, and standard e-beam lift off. The formation of the heteroepitaxial structures, in the form of nano-wires, is carried out using pulsed laser induced epitaxy, an ultra-rapid (<100ns) epitaxial growth technique driven by a pulsed excimer laser. Development of a novel, high yield cross sectioning process to examine the wire structures was also carried out during the course of this effort. This process used ion beam deposition of a platinum etch mask, followed by an enhanced, localized ion beam etch to define the wire specimen. Results from cross sectional transmission electron beam analysis indicate successful formation of the heteroepitaxial wires with no defects being observed. jg.