Metamorphic InAsSb-based Barrier Photodetectors for the Long Wave Infrared Region.

摘要

InAs(0.6)Sb(0.4) /Al(0.75)In(0.25)Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga(1-x) InxSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 micormeter and T=150K, devices with 1-micrometer thick absorbers demonstrated an external quantum efficiency of 18% under a bias voltage of 0.45 V.