Growth of Lattice Matched InA1N on ZnO by MOMBE

摘要

Research Conducted in the last year has focussed on the preparation and cleaningof ZnO substrates and on the initial growth of InAlN by Metal Organic Molecular Beam Epitaxy (MOMBE). Significant improvement in surface morphology of the substrates has been verified by Atomic Force Microscopy (AFM). High resolution X-ray diffraction (HRXRD) has shown an improvement in the substrate quality as indicated by a very small full-width half-maximum (FWHM) for the ZnO peak. Annealing studies of the ZnO substrates revealed that no substantial loss of oxygen from the ZnO surface could be detected by Auger electron spectroscopy, nor could a change in surface morphology be found by AFM. Several InAlN samples have been grown on the ZnO substrates and have been analyzed by electron microprobe and powder X-ray diffraction to determine the ternary compositions. Thus far the nitride compositions are approaching the lattice matched composition of In.32SA10.675N and significant improvements in surface morphology have been achieved by varying traditional growth parameters.