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Thermopower data analysis for the mercury-based HTS: Band structure calculations within a narrow-band model

机译:汞基高温超导的热电数据分析:窄带模型中的能带结构计算

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We have performed the analysis of the normal-state thermopower for HgBa2Can-1CunO2n+2+delta (n=1,2,3) within a narrow-band model. This model was earlier shown to allow one to describe the normal-state transport properties for Y- and Bi-based HTS giving a possibility to determine the main band spectrum parameters (the band filling degree, the effective bandwidth and the degree of charge carrier localization) for samples of different composition. Here we apply the same approach to the Hg-based HTS with varying number of CuO2 layers for the case of the optimal doping, as well as in the underdoped and overdoped regimes. The results obtained have shown that a narrow-band model is applicable to the Hg-compounds. Our calculations show that in all the HgBa2Can-1CunO2n+2+delta phases the band filling is close to 0.5 and the conduction band is slightly asymmetrical. The total effective bandwidth for optimally doped HgBa2Can-1CunO2n+2+delta (n=1,2,3) is about 70-200 meV with a tendency to a band broadening with increasing n. We assume that this is related to forming by CuO2 layers additional states near the Fermi level that results in a rising density-of-state peak. [References: 17]
机译:我们已经在窄带模型中对HgBa2Can-1CunO2n + 2 + delta(n = 1,2,3)的常态热功率进行了分析。较早地表明,该模型可以描述基于Y和Bi的HTS的常态传输特性,从而有可能确定主要的频段频谱参数(频段填充度,有效带宽和电荷载流子定位程度) )用于不同成分的样品。在这里,对于最优掺杂的情况,以及在掺杂不足和掺杂过量的情况下,我们将相同的方法应用于具有不同数量的CuO2层的基于Hg的HTS。所得结果表明,窄带模型适用于汞化合物。我们的计算表明,在所有HgBa2Can-1CunO2n + 2 + delta相中,带填充接近0.5,并且导带略微不对称。最佳掺杂的HgBa2Can-1CunO2n + 2 + delta(n = 1,2,3)的总有效带宽约为70-200 meV,并且随着n的增加,带变宽。我们假设这与通过CuO2层在费米能级附近形成额外的状态有关,从而导致状态密度峰值的上升。 [参考:17]

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